The low-dimensionality semiconductor heterostructure constitute attractive systems due to both their fundamental proper-ties and their potential applications in electronics and optoelectronics devices1,2,3. In this work we studied within the effec-tive mass approach and a theoretically study of the fundamental energy and fisrts energies states in systems of double quan-tum well (DQW) of the GaAs-(Ga,As)Al heterostructure. We calculated the energies and its probability functios for the systems of DQW for different widths separated by wide (Ga,As)Al barriers for different Al´s concentration. In this work we found that the energy of the fundamental state and the first states grown when the width of the well increase and the hight of the barriers increase too. Our results are in good agreetment with the experimental results and theoretically re-sults1,4