Pressure dependence of Raman-active mode frequencies and linewidths in Cu 3 NbS 4 ternary compound has been investigated up to 30 Kb (at room temperature) using focalized micro-Raman technique in a diamond anvil high pressure cell. Seven Raman-active modes frequencies were clearly observed in the pressure range studied and the variation of their respective Raman shift frequency as a function of pressure were given. A structural phase transition at 25 ± 5 Kb previously reported in literature was confirmed. Se investigo la dependencia con la presion (hasta 30 Kb y a temperatura ambiente) de las frecuencias y los anchos de linea de los modos Raman activos del compuesto ternario Cu 3 NbS 4 usando una celda de presion de diamante y la tecnica de micro-Raman focalizado. Se observaron claramente siete modos de frecuencia Raman-activos en el rango de presion estudiado y se reportan sus variaciones en funcion. Se confirmo una transicion de fase estructural a 25 ± 5 Kb anteriormente reportada en literatura.