Laser induced damage threshold of SiO 2 and TiO 2 thin films prepared by e-beam evaporation technique on BK7 glass substrate at normal without heating. TiO 2 and SiO 2 deposited by such method were annealed in air for an hour at temperature of 250 0 C. X- ray diffraction of these samples shows the amorphous behavior of the SiO 2 and TiO 2 films. Using spectrophotometer standardization for quarter wave optical thickness (QWOT) were calculated reflectivity of TiO 2 , at quarter wave optical thickness confirms its reflective behavior while that of SiO 2 film confirms anti-reflective behaviors. Simulation of above film design performed with OpenFilter software. Electric field intensity and reflectivity are characterized with this software. Simulation results show that standing wave electric field is higher in TiO 2 as compare to SiO 2 film and thus due to this higher electric field damage thresholds of TiO 2 will be lower than the SiO 2 films.