ImpactU Versión 3.11.2 Última actualización: Interfaz de Usuario: 16/10/2025 Base de Datos: 29/08/2025 Hecho en Colombia
Propiedades ´ Opticas De Silicio Policristalino Depositado A Diferentes Potencias Por La T´ ecnica PECVD Optical Properties Of Polycrystalline Silicon Thin Films Deposited Varying Power Range By PECVD Method
In this work, a series of polycrystalline silicon films (pc-Si) were deposited by plasma-enhanced chemical vapor deposition (PECVD) to potential applications in solar cells. The power range was varied between 2 and 15 watts. Optical properties were analyzed by transmittance measurements as a function of wavelength and using the model of Swanepoel the optical gap (Eg), absorption coefficient ( ), refractive index (n) and thickness (d) of the samples, were obtained. We found a value for the gap around 1.28 eV for all samples and a thickness of about 1 m.
