this paper gives the preliminary results about aluminum nitride (aln) nanoestructured films deposited by pulsed laser deposition (PLD) technique, by using laser Nd:YAG (λ=1064), which hit a target of high purity aluminum (4N) in a nitrogen atmosphere. We used glass slide, si3n4 (100) and si (100) as substrates. the deposition time was 15 minutes at laser fluence 7 J/cm2 and room temperature. The thicknesses of thin films were 50 nm measured with a profilometer. The influence of nitrogen on thin films was studied by changing room gas pressure between 3 and 4 mTorr. Also we have studied the influence of substrate on morphological properties of AlN thin films. The film nanostructure was determined by scanning electron microscopy (sem), atomic force microscopy (aFm) –the chemical composition– using the technique of energy dispersive X-ray (edX). the crystal structure was examined with X-Ray Diffraction (XRD) to a 4 mTorr film on a Si3n4 (100) substrate giving a polycrystalline structure with reflections of planes (002), linked to the wurtzite-like structure of aln.