Ga 1-x In x As y sb 1-y is a promising semiconductor for applications in optoelectronic devices working in the near and mid-infrared range. One of the many factors that must be considered in the design and fabrication of these devices is the electrical characteristic of the contacts, since the electrical behavior ofthe device can be affected by the specific contact material. Current voltage characteristics, varying temperature range from 11 to 300K for different metals (Au, In, Cu, Ag) are reported in this work. The method used to obtain I - V curves is the four-point parallel probe known as the Van der Paw convention. The line shape is associated to the Schottky barrier characteristic, considering a metal-semiconductor-metal structure. The samples under study were grown by liquid phase epitaxy from liquid solutions with slightly variation on the As concentration. The x value for these samples ranges between 0.157 and 0. 175. In order to study the electrical response of the different metals, we deposited as electrodes Cu, In, Ag and Au over the semiconductor samples. We calculated the barrier height and ideality factor values, and from the comparison ofthe response for different configurations ofmeasures, we obtained information ofeach one ofthe contacts.