Due to device scaling, anomalous effects such as punch through and leakage current, are present in CMOS transistors. These problems have been reduced by constructing less deep sources and drains using new methods that include pre-amorphization implants [2] or new technologies replacing ion implantations [3] because they produce surface damages in the crystal, causing the Transient Enhanced Diffusion (TED) by the presence of {311} defects [4]. In this essay, it is shown that implanting relatively high energies and doses of boron and boron difluoride (BF 2 ) near the threshold energy reduces damages and annealing to specific temperatures and times using a Rapid Thermal Process RTP system. This low level of damages, especially those associated with the End Of Range (EOR), act as a slowdown diffusion of TED and allows one to obtain abrupt p + concentration profiles with active concentrations up to 1x10 19 cm -3 and junction depths smaller than 400 nm, so shallow junctions built with this method are ideal to use in the manufacture of source/drain CMOS transistors.