Due to the Au conductivity, good electric characteristics of AuN are expected, which could generate applications in the electronic industry. AuN films were grown through the Plasma Assisted Physic Vapor Deposition (PAPVD) by the pulsed arc technique. Films were chemically characterized through X-Ray Photoelectron Spectroscopy (XPS) in order to determine its composition. Using Scanning Tunneling Microscopy (STM), and due to the electric conductivity of the films, images and I-V curves were obtained in order to observe the morphology of the films and to obtain the gap value, respectively.