espanolSe fabricaron peliculas delgadas de Dioxido de Vanadio, VO2, sobre substratos de zafiro (0001), silicio (100) y vidrio, en una atmosfera de argon y oxigeno a una temperatura de substrato de 480oC, utilizando un blanco (target) de vanadio metalico, mediante la tecnica de Magnetron Sputtering R.F. a 13.56 MHz. Posteriormente se realizo un recocido �in situ� de las peliculas, en una atmosfera de argon y oxigeno. Se estudio el efecto del substrato sobre la morfologia de las peliculas de VO2 mediante la tecnica de Microscopia de Fuerza Atomica (AFM) asi como la estructura cristalina de las mismas por Difraccion de Rayos X (DRX). Las muestras se caracterizaron electricamente mediante curvas de resistencia en funcion de la temperatura. Se obtuvo tamanos de grano del orden de 201, 255, 431 nm y rugosidades del orden de 21, 11 y 10 nm para las muestras crecidas sobre substratos de zafiro, silicio y vidrio respectivamente. EnglishIn this work, thin films of VO2 were grown on (0001) sapphire, (100) silicon, and glass substrates, in an argon and oxygen atmosphere at 480°C of deposition temperature. We used a target of pure metallic vanadium in an rf magnetron sputtering technique at 13.56 MHz. After deposition we have carried out an annealing �in situ� of the films at the same growth conditions. We have studied the dependence of the surface morphology, crystalline structure and electrical properties with the substrate. Morphology, structure and electrical properties of the samples were characterized by atomic force microscopy (AFM), x-ray diffractrometry, and resistance as function of temperature measurements respectively. We have observed grain sizes of 201, 255, 431 nm, and roughness of 21, 11, and 10 nm for the samples that were grown on sapphire, silicon, and glass, respectively.