Amorphous carbon nitride thin films (a-CNx) were deposited from a pyrolytic graphite (99.999%) target in nitrogen atmosphere on Si (100) substrate at different temperatures and gas pressure by Pulsed Laser Deposition (PLD) technique. The films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and Atomic Force Microscope (AFM). The FTIR analysis shows the presence of peaks above 2200 cm-1 associated with sp1 C�sN triple bonds and the frequency range 1440.1650 cm-1with the sp2 C=C and C=N modes. Raman spectra show an amorphous structure and intensity ratio of D to G peak, ID/IG increases with increasing deposition nitrogen gas pressure and substrate temperature. The AFM microgram presents a smoothness and uniformity, which follows a high quality of films.