A detailed study is performed of the production of InAs quantum dots grown on InGaAlAs lattice matched to InP.Performing the optical and morphological characterization of the quantum dots the dependence of the height and density of the quantum dots with the growth conditions is obtained.The quantum dots were produced under different growth conditions.Temperature, growth time and growth rate were changed from one sample to another.We use atomic force microscopy (AFM) and photoluminescence (PL) techniques to evaluate the effect of the growth conditions on the optical quality of the obtained structures, as well as the quantum dots heights, their homogeneity and density distribution.Image processing of AFM images was optimized to allow better accuracy in the analysis of quantum dot height.The AFM results, such as quantum dots height and density, were related and analyzed with their respective PL emission.Finally, simulations of the quantum dots' energy levels were performed to correlate them with the quantum dots height and PL signal.