Some issues such as tunneling, leakage current and light atom penetration through the film are threatening the ultra thin SiO2 be as a good dielectric for future industrial and electronic devices and in ceramic technologies. A series of experiments to synthesis La2O3 as well as CrO2 has been done at low temperature with using sol-gel method. The nano structural properties of La2O3/CrO2 equipped with 5 to 40 nm size are investigated. The obtained results show the potential of La2O3/CrO2 for not only for lowering the interface–state density, but also as a good dielectric for the future of nano electronic. These structures have been studied by using XRD (x-ray diffraction) technique and X- powder method. Key words: Nano structures, La2O3, gate dielectric, x-powder method and sol-gel method.