The CdTe solar cell back contact interface gets activated by means of thermal annealing. Depending on the back contact (BC) material the annealing time can vary between 20 - 60 minutes. In this study fast contact anneal times - <;90 secs - are investigated using a 60 Watt dual diode 808nm laser. Two types of back contacts are used: (a) Cu-Graphite, and (b) MoN/Mo-Cu. Laser power density (LPD) and Cu concentration were varied to study their effect on device performance. Capacitance-voltage characteristics revealed a correlation between LPD and the net doping concentration in CdTe. Higher Cu concentration was found to be detrimental to the device performance, possibly due to excess Cu reaching the CdTe/CdS interface as indicated by secondary ion mass spectroscopy (SIMS) measurements. Solar cells exhibited open-circuit voltage (VOC), short-circuit current (JSC), and fill-factor (FF) similar to the baseline thermally anneal devices. To-date the LPD was optimized with best cell parameters being: VOC= 830 mV, JSC= 22 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and FF= 70 %, for laser anneal time of 90 seconds.