With the aim to determine the photo-generated current, diode saturation current, ideality factor, shunt, and series resistances related to the one-diode model for p-i-n planar perovskite solar cells, reference cells with active area of approximately 1 cm2 and efficiencies ranging between 4.6 and 12.2% were fabricated and characterized at standard test conditions. To estimated feasible parameters, the mean square error between the I-V curve data of these cells and the circuital model results were minimized using a Genetic Algorithm combined with the Nelder-Mead method. When considering the optimization process solutions, a numerical sensitivity analysis of the error as a function of the estimated parameters was carried out. Based on the errors behavior that is showed graphically through maps, it was demonstrated that the set of parameters estimated for each cell were reliable, meaningful, and realistic, and being related to errors lower than 9.1 × 10−9. Therefore, these results can be considered as global solutions of the optimization process. Moreover, based on the lower errors obtained from the optimization process, it was possible to affirm that the one-diode model is suitable to model the I-V curve of perovskite solar cells. Finally, the estimated parameters suggested that the average ideality factor is close to 2 when the fill factor of the I-V curves is higher than 0.5. Lower fill factors corresponded to ideality that was higher than 3, linked to lower efficiencies, and high loses effects reflected on lower shunt resistances. Lower ideality factor of 1.4 corresponds to the best performing solar cells.