The electron states in a holey elliptically shaped GaAs quantum dot are investigated within the effective mass scheme with the use of the adiabatic approximation and the finite element method. The effects of a donor impurity center and an applied electric field are particularly taken into account. Electron‐impurity energies are reported as functions of both the geometry of the quantum dot and the applied field intensity, whereas temperature effects are also included. The analysis of electron‐impurity intersubband transitions allows the investigation of the light absorption response of the system.