We study the conductance in gapped single-layer graphene junctures as a function of bangap, pseudohelicity and charge carriers density. To do it, we first calculate the transmission coefficients of massive charge carries for p–n and n–p–n junctures of gapped single-layer graphene. Next, we calculate the conductance for these two systems using the Landauer formula. Only for the p–n juncture case and non-zero bandgap values, we find the existence of a contribution to the conductance from pseudohelicity inversion states, which is small compared to the contribution from pseudohelicity conservation states. Also, we find for both type of junctures that there exists a window of charge carriers densities values where the conductance is zero (conductance gap), in such a way that the size of this window depends on the squared of the bandgap. We observe that the existence of a bandgap in the system leads to valley mixing and this fact could be useful for the future design of devices based on single-layer graphene.