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Construction, study and mathematical modelling of the electrical behavior of CZTiS photovoltaic material as function of time and synthesis temperature

Acceso Abierto
ID Minciencias: ART-0000229660-778
Ranking: ART-GC_ART

Abstract:

This work reports the obtaining, study and mathematical modeling of a photovoltaic material type CZTiS (Cu2ZnTiS4), in function of two thermodynamic variables such as temperature and hydrothermal synthesis time. The obtention the materials had to be validated through the implementation of characterization techniques such as X-Ray Diffraction (XRD) and solid state Impedance Spectroscopy (IS). The results of the characterization, allowed to confirm in all cases the obtention of the materials, with a crystalline structure concordant with a tetragonal geometry space group of I-42m, a preferential crystalline orientation in the plane (1 1 2), with crystal sizes in the nanometric order (5-6nm). The electrical characterization, showed a semiconductor behavior of the solids concordant with values of conductivity that can be modeled by the analysis of variance and verified through the Kramers-kronig transform. The information obtained confirms that the temperature variable is the most strong influence in the electrical behavior of the CZTiS material, which is in agreement with similar works evaluated with alternative techniques [1].

Tópico:

Chalcogenide Semiconductor Thin Films

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Citations: 2
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Información de la Fuente:

SCImago Journal & Country Rank
FuenteJournal of Physics Conference Series
Cuartil año de publicaciónNo disponible
Volumen935
IssueNo disponible
Páginas012064 - 012064
pISSNNo disponible
ISSN1742-6596

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