In the electronic devices based on porous silicon (PS) is important understand the physical mechanisms governing the electrical behaviour in the PS/c-Si structure. In order to investigate the conduction mechanisms in the PS/p-Si heterojunction, we prepared the PS by electrochemical etching. The temperature dependence of the porous silicon was studied in the range from 300 K to 393 K, in a range until 10 V. On the other hand, the AC electrical measurements were performed from 5 Hz to 10 7 Hz. The calculated activation energies were close to 0,42 eV at 2 V. The physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found the dielectric behavior of the sample; the relaxation region is presented at high frequency