Pulsed laser deposition (PLD) is proposed as promising technique for the fabrication of multilayered BiVO4-based photoanodes. For this purpose, bare BiVO4 films and two heterojunctions, BiVO4/SnO2 and BiVO4/WO3/SnO2, have been prepared using consecutive ablation of assorted targets in a single batch. The ease, high versatility and usefulness of this technique in engineering the internal configuration of the photoanode with stoichiometric target-to-substrate transfer are demonstrated. The obtained photocurrent densities are among the highest reported values for undoped BiVO4 without oxygen evolution catalysts (OEC). A detailed analysis of the influence of SnO2 and WO3 layers on the charge transport properties because of the changes at the internal FTO/semiconductor interface is performed through transient photocurrent measurements (TPC), showing that the BiVO4/WO3/SnO2 heterostructure attains a significant decrease in the internal losses and reaches high photocurrent values. This study is expected to open the door to the fabrication of other systems based on ternary (or even more complex) metal oxides as photoanodes for water splitting, which is a promising alternative for obtaining materials able to fulfill the different requierements in the development of more efficient systems for this process.