We performed a detailed study of the structure and transport properties of Bi2212/22Y2/2212 planar-type tunnel junctions. Both high-temperature superconducting electrodes and semiconducting barriers are highly epitaxial thin films deposited onto SrTiO3 single-crystal (001) substrates. Deposition of the films was carried out by a high oxygen pressure dc-sputtering technique, which produces high-quality epitaxial thin films, as determined by x-ray diffraction, lattice resolution transmission electron microscopy, and Rutherford backscattering. Critical temperatures for the superconducting electrodes of 85 K were determined by transport measurements (ρ and χ versus T). A study of resistivity as a function of temperature of the semiconducting barriers was performed. Clear quasiparticle tunneling indicating a gap structure at about 30–35 mV, a zero-bias peak, as well as linear and flat background at high voltages have been observed. For junctions with very thin barriers weak-link-type behavior was observed. An analysis of the I–V curves for these junctions has been made based on the resistively shunted junction model.