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A search for the ground state structure and the phase stability of tantalum pentoxide

Acceso Cerrado
ID Minciencias: ART-0000226777-13
Ranking: ART-ART_A1

Abstract:

Tantalum pentoxide (Ta2O5) is a wide-gap semiconductor that presents good catalytic and dielectric properties, conferring to this compound promising prospective use in a variety of technological applications. However, there is a lack of understanding regarding the relations among its crystalline phases, as some of them are not even completely characterized and there is currently no agreement about which models better explain the crystallographic data. Additionally, its phase diagram is unknown. In this work we performed first-principles density functional theory calculations to study the structural properties of the different phases and models of Ta2O5, the equation of state and the zone-centered vibrational frequencies. From our results, we conclude that the phases that are built up from only distorted octahedra instead of combinations with pentagonal and/or hexagonal bipyramids are energetically more favorable and dynamically stable. More importantly, this study establishes that, given the pressure range considered, the B-phase is the most favorable structure and there is no a crystallographic phase transition to another phase at high-pressure. Additionally, for the equilibrium volume of the B-phase and the λ-model, the description of the electronic structure and optical properties were performed using semi-local and hybrid functionals.

Tópico:

Semiconductor materials and devices

Citaciones:

Citations: 37
37

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Información de la Fuente:

SCImago Journal & Country Rank
FuenteJournal of Physics Condensed Matter
Cuartil año de publicaciónNo disponible
Volumen28
Issue3
Páginas035801 - 035801
pISSNNo disponible
ISSN1361-648X

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