Quantum transport that takes into account spin polarization has a high potential for research on optimal heterostructures for fabrication of nano-spintronic devices and quantum computing. This work theoretically analyzed different materials on the basis of type-II strained heterostructures like InAs/GaSb, InSb/GaSb, InSb/GaAs, and GaSb/GaAs by means of the spin polarization that considers the interacting spin coupling type: k3- Dresselhaus and Rashba in the electric barriers and the influence of in-plane magnetic field on spin polarization. The results obtained for the polarization of spin are in function of the energy applied to the electron, well width, height of barrier, and magnetic field intensity. This suggests that these features could be engineered in the fabricating of tunable spin- dependent electronic devices, such as spin switches based on double-barrier non-magnetic semiconductors.