Precursor powders of lanthanum strontium manganate (La1-xSrxMnO3) were synthesized by solid state reaction with x=0.1, 0.33 and 0.6. These materials were annealed at temperatures between 900 and 1300 °C to produce a crystalline powder which was then compressed to form 1 cm diameter targets for the pulsed laser deposition (PLD). Thin films were deposited from these targets at room temperature by PLD in an 80/20 Ar/O2 atmosphere at 7.5×10-2Torr. The thin films were annealed at 900 °C in air. The structural characterization of both the bulk material and the thin films was studied by X-ray diffraction which indicated that they were polycrystalline but for the films the degree of crystallinity was strongly influenced by the final annealing temperature. The composition and morphology were analyzed using SEM and EDS. The thin film samples exhibit a semiconductor behavior and high magnetoresistance (0.7–42%) at room temperature with a magnetic field of 1.7 T.