The electrical transport properties of a polycrystalline sample of Cu2FeGeSe4 magnetic semiconductor compound are studied in the temperature range between 100 and 300 K. From the analysis of the electrical data, the values of the activation energy EA, the density of states effective mass of the holes mp, the concentration of the ionized impurities NI, the sound velocity v and the valence-band deformation potential Eac for the compound are estimated.
