This work reports results concerning the effect of the deposition parameters on the structural properties of Cu 2 ZnSnSe 4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu 2 Se and SnSe 2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu 2 ZnSnSe 4 films was analyzed. The electrical behavior of the compound was studied.