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Hydrostatic‐pressure effects on the correlated electron–hole transition energies in GaAs–Ga1–xAlxAs semiconductor quantum wells

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Abstract:

Abstract The effects of hydrostatic pressure on the correlated e–h transition energies in single GaAs–Ga 1– x Al x As quantum wells are calculated via a variational procedure, in the framework of the effective‐mass and non‐degenerate parabolic‐band approximations. The valence‐band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. Both heavy‐ and light‐hole exciton energies are obtained, and correlated e–h transition energies are found in good agreement with available experimental measurements. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Tópico:

Semiconductor Quantum Structures and Devices

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Citations: 21
21

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Información de la Fuente:

SCImago Journal & Country Rank
Fuentephysica status solidi (b)
Cuartil año de publicaciónNo disponible
Volumen243
Issue3
Páginas635 - 640
pISSNNo disponible
ISSN0370-1972

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