Nowadays there is a lot of work devoted to the study of the electron Landé g factor in semiconducting low dimensional structures due to its potential technological applications. Therefore manipulation of the electron Landé g factor by means of the control of the electron confinement, applied magnetic field and applied hydrostatic pressure offers the possibility of having a wide range of ways to control single qubit operation and to have pure spin states to guarantee that no losses occur when the electron spin transports information. This may be achieved by manipulating the electron Landé g factor in semiconductor heterostructures designing appropriate external gate control devices. In this work we study the electron Landé g factor in GaAs‐(Ga, Al) coupled quantum wells in the presence of growth direction applied magnetic field, using the Ogg‐McCombe effective Hamiltonian for the electron in the conduction band in GaAs‐(Ga, Al) coupled quantum wells, which includes nonparabolicity and anisotropy effects. Our calculations are performed for different widths of the wells and of the in‐between barrier material, and as a function of the applied magnetic field.