We report Lamb acoustic wave resonators that are suitable for RF applications and that exhibit high power handling at high frequencies above 1 GHz. Resonators use aluminum–nitride as acoustic layer and are fabricated in the Institute of Microelectronics (IME) Agency for Science, Technology and Research (A*STAR)'s in-house RF microelectromechanical system silicon-on-insulator platform. We focus the study on devices operating at their first symmetric Lamb-wave mode (S0) at 900 MHz and 1.5 GHz, although demonstrate 400 MHz and 1.2 GHz as well. All devices are realized in the same multi-frequency platform. Assessment of devices covers gain compression point (P1dB), third-order intermodulation intercept point (IIP3), thermal management, impedance matching, and quality factor. Devices exhibit P1dB above <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$+{\hbox{30}}$</tex></formula> dBm, and IIP3 higher than <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$+{\hbox{50}}$</tex> </formula> dBm with low insertion losses less than 3 dB and 50- <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\Omega$</tex></formula> impedance matching.