Abstract The idea about change of energy distances between space-quantized energy levels by ionization of an impurity delta layer situated within a quantum well (QW) is put forward and justified. The self-consistent solutions of Schrödinger, Poisson, and electroneutrality equations made for n-type SiGe/Si/SiGe rectangular QW show that the effect really exists and the most dramatic changes can be observed for an edge-delta-doped QW structure. Keywords: Si/Gequantum wellselectronic structure Acknowledgments V. Tulupenko is very grateful to rector of Antioquia University, Medellín, Colombia, Prof. A. Uribe Correa for a given possibility to join University and good conditions for working for a period of 2 months. The authors are grateful for the fruitful discussions to Profs. O. Sarbey and V. Vainberg.