The Rietveld method for structure refinement has been used to study the synthesized CuGaTe2, CuGa0.8In0.2Te2, CuGa0.5In0.5Te2, CuGa0.2In0.8Te2, CuInTe2 compounds. The discrepancy index are under 0.0806 for Rp, 0.1043 for Rwp, 0.0842 for RB, and 0.1460 for RF. The derived structural parameters at 26.5 °C follows linear regression laws: a=(0.602 22+0.016 25y) nm and c=(1.194 95+0.045 06y) nm, where y is the In contents. Both the ratio between lattice parameters η=c/2a and the anion displacements x[Te] diminish with the increase of In contents. Introducing In in CuGaTe2 produces an interchange in the geometrical behavior (bond distances) between Cu and Ga atoms. The distortion of Te tetrahedra increases with the In contents.
Tópico:
Chalcogenide Semiconductor Thin Films
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15
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Información de la Fuente:
FuenteJournal of Vacuum Science & Technology A Vacuum Surfaces and Films