The relationship between AlSiCu target manufacturing technique and sputtered-deposited film quality was examined with an emphasis on film uniformity and process control. Targets with the following attributes were evaluated: standard grain size (0.5 mm)—random orientation, standard grain size (1.4 mm prior to orientation)— 〈110〉 orientation, small grain size (0.15 mm)—random orientation, and small grain size (0.2 mm prior to orientation)— 〈110〉 orientation. A Varian 3290 sputtering system and Al 0.8%Si 0.5%Cu (weight percent) targets was used to deposit thin films under standard production conditions. Deposition uniformity, thin film microstructure and analytical results are reported. Beneficial synergism was noted when the combination of small grain size and grain orientation was produced in the target manufacturing process. These targets displayed significantly better sputtered film thickness uniformity, more consistent target erosion through target life and increased target lifetime. A mechanism for these enhancements, uniform target erosion, is discussed. Other critical properties of films deposited from the four target types were found to be equivalent for device production.