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Influence of Uniaxial Stress on the Polarization of Spontaneous Emission from p-Ge

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Abstract:

The intensity of polarized spontaneous emission as a function of uniaxial stress in p-Ge is studied. It is found that with rising of stress dependence of the radiation polarization rotates by π/2. The effect is explained by the modification of the energy spectrum of free and impurity states under the uniaxial compression.

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Semiconductor Quantum Structures and Devices

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SCImago Journal & Country Rank
FuenteMaterials science forum
Cuartil año de publicaciónNo disponible
Volumen384-385
IssueNo disponible
Páginas221 - 226
pISSNNo disponible
ISSN1662-9752

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