Key areas of ion source process development are discussed with emphasis on their application to new or existing sputtering systems utilizing large linear ion sources. In order to minimize film contamination and achieve static deposition thickness uniformity, the development required characterization of the ion source lateral and longitudinal beam divergence as well as beam alignment and stability. Mechanical adjustments to the source grid gap, grid aperture offset and grid outline were employed to optimize the beam characteristics. Additionally, ion source operating conditions were optimized in order to improve beam divergence and stability.