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Comparative study of the hydrostatic pressure and temperature effects on the impurity‐related optical properties in single and double GaAs–Ga1–xAlxAs quantum wells

Acceso Cerrado

ID Minciencias: ART-0000036790-17510

Ranking: ART-ART_B

Idioma: Inglés

Publicado: 01/02/2007

APC (est): No disponible

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Abstract:

Abstract Using a variational technique within the effective mass approximation we have carried out a comparative study of the effect of hydrostatic pressure and temperature on the shallow‐impurity related optical absorption spectra in GaAs‐Ga 1– x Al x As single and double quantum wells. The results show a pressure dependent read‐shift and a temperature dependent blue‐shift in the optical absorption spectra. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Tópico:

Semiconductor Quantum Structures and Devices

Citaciones:

Citaciones por año:

Altmétricas:

Información de la Fuente:

FuentePhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics	Cuartil año de publicaciónNo disponible	Volumen4
Issue2	Páginas298 - 300	pISSNNo disponible
ISSN1610-1634	Perfil OpenAlexhttps://openalex.org/S4210174949

Enlaces e Identificadores:

Scienti ID	0000177237-15	Scienti ID	0000036790-17510	Scienti ID	0000112488-384
Minciencias ID	ART-0000036790-17510	Openalex URL	https://openalex.org/W2048592735	Doi URL	https://doi.org/10.1002/pssc.200673259
Scholar URL	https://scholar.google.com/scholar?hl=en&as_sdt=0%2C5&q=info%3AS6bQdPdpyrwJ%3Ascholar.google.com&btnG=	Scholar citations URL	https://scholar.google.com/scholar?cites=13603802135963674187&as_sdt=2005&sciodt=0,5&hl=en

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