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Occurrence of ferroelectricity in epitaxial BiMnO3 thin films

Acceso Cerrado
ID Minciencias: ART-0000443549-20
Ranking: ART-ART_B

Abstract:

In this paper, we report evidence of ferroelectricity in perovskite manganite (BiMnO3) thin films synthesized via r.f. magnetron sputtering method on a single-crystal (1 0 0)-oriented SrTiO3:Nb 0.1% and Pt/TiO2/SiO2/Si substrates. X-ray diffraction measurements were used to analyse the crystal structure of the thin films, revealing epitaxial growth for BiMnO3 films with their (1 1 1) and (2 2 2) planes parallel to the (0 0 1) and (0 0 2) planes of the SrTiO3 substrate. AFM measurements were performed to investigate surface morphology; quantitative values of roughness and grain size are in the range between 300 and 500 nm. Ferroelectric characterization was conducted at low temperatures and at 300 K. Hysteresis loops (polarization vs. voltage) were obtained, showing saturation polarizations of 40nC/cm2, and 25nC/cm2 at 105, 122, and 300 K. Resistance vs. temperature measurements were performed, which indicated this to be very robust insulating material.

Tópico:

Multiferroics and related materials

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Citations: 26
26

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Información de la Fuente:

FuenteMicroelectronics Journal
Cuartil año de publicaciónNo disponible
Volumen39
Issue11
Páginas1308 - 1310
pISSNNo disponible
ISSN0026-2692

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