Probabilities of intra- and intersubband acoustic scattering of holes in uniaxially stressed p-Ge in electric field are calculated. Perturbation of the free hole states by impurity potential is taken into account. Perturbation has a resonant nature and takes maximum values in the region of hole energy around energy position of quasi-local impurity state. Probabilities of acoustic and impurity scattering increase abruptly in that region. Calculated probabilities are used for Monte-Carlo simulation of hole motion in uniaxially stressed p-Ge in strong electric field. The essential influence of intersubband hole transitions with partaking of high-frequency acoustic phonons on the electric current is shown. Comparisons of theoretically obtained current-pressure dependences and experimental ones is performed.