In this work we study the Landé g‐factor of a GaAs‐(Ga, Al)As cylindrical quantum dot under an axis‐parallel applied magnetic field, using the Ogg‐McCombe effective Hamiltonian[1] for the electron in the conduction band of the GaAs‐(Ga, Al)As heterostructure, which includes nonparabolicity and anisotropy effects. The quantum dot is assumed to consist of a finite length cylinder of GaAs surrounded by (Ga, Al)As. Our calculations are performed for different radii and lengths of the cylindrical GaAs‐(Ga, Al)As quantum pillbox and as function of the applied magnetic field. Our results are in good agreement with previous theoretical results[2] in the limiting geometry of a quantum well.