In this paper we present results concerning the effect of preparation conditions on the surface chemistry and crystalline phase of Cu(In,Ga)Se2 (CIGS) thin films grown by a chemical reaction of the precursor species in two and three stage processes. The CIGS samples were studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. It was found that the bulk of the samples grown in a three stage process contains mainly the CIGS phase; however, secondary phases like In2Se3, Cu2Se and In2O were additionally identified at the surface of CIGS samples grown in two stages.