We have studied spin-polarized currents in resonant tunneling diodes containing diluted magnetic semiconductor layers with different geometries. The spin polarization effects on the resonant current are studied within Green's function formalism following the diagrammatic technique for non-equilibrium processes as proposed by Keldysh, using the one-band tight-binding modeling. The magnetic impurities can be located inside the well or the barrier layers of a diode sample. The resonant I×V curves are analyzed as a function of the magnetic potential strength induced by the magnetic ions.