The hydrostatic-pressure effects on the electron-effective Landé [Formula: see text] factor and g-factor anisotropy in semiconductor GaAs-Ga(1-x)Al(x)As quantum wells under magnetic fields are studied. The [Formula: see text] factor is computed by considering the non-parabolicity and anisotropy of the conduction band through the Ogg-McCombe effective Hamiltonian, and numerical results are displayed as functions of the applied hydrostatic pressure, magnetic fields, and quantum-well widths. Good agreement between theoretical results and experimental measurements in GaAs-(Ga, Al)As quantum wells for the electron g factor and g-factor anisotropy at low values of the applied magnetic field and in the absence of hydrostatic pressure is obtained. Present results open up new possibilities for manipulating the electron-effective g factor in semiconductor heterostructures.