In this work, we present theoretical calculation for the exciton binding energy in GaAs/Ga0.7Al0.3As quantum wells under hydrostatic pressure. Our results are obtained in the effective-mass approximation and using a variational procedure. The expectation values for the in-plane electron–hole distance for the 1s, 2s, 2px, 3s, and 3px-like states are calculated. Finally, we discussed the intraexcitonic transition energies.