The ternary semiconducting compound Cu2GeSe3 is of considerable interest, because it has a low melting point (MP ≈︂ 770 °C) which makes this materials a potential candidate for acousto-optical applications. In this work, measurements of the Hall coefficient RH and the transverse magnetoresistance (Δρ/ρ) of p-type Cu2GeSe3 were realized. The measurements were carried out at temperatures of 100 to 250 K in magnetic fields from 0 to 1.6 T. This compound exhibits a metallic impurity conduction at temperatures above 150 K and present a thermally activated transport mechanism at low temperatures. In this semiconductor, magnetoresistance of both positive and negative signs was observed.