Since the surface evaporation technique is less cost compared to the point evaporation and the line evaporation technique, it is focused by the research and development from major OLED manufacturers recently. In this study, we use the finite element thermal analysis software, ANSYS, to simulate the arrangement of the large-area evaporation with deposition heating source of infrared lamp. Changing the arrangement of the infrared lamp can improve the uniformity on the susceptor surface temperature within ± 1 ~ 3% at 30 ~ 500℃. There are five improvement parameters for the arrangement of infrared lamp heating source: (a) the material of holder, (b) the material of susceptor, (c) the horizon distance between heaters, (d) the vertical distance between heater and cover, (e) the six zones power control. Besides we analyze the heating rate to make it greater than 100℃/min due to the requirement of rapid heating in the evaporation. We also observe the concentration distribution of the evaporation material (source) in the chamber and discuss the deposition efficiency on glass substrate. These studies will be used as base lines for the R2R (run to run) evaporation technologies in the future.