The elements Ru, Rh, Pr, Eu, Tm, Lu, Re, Os, and Ir have been successfully implanted into Si, and, in some cases, GaAs, in order to quantify secondary ion mass spectrometry (SIMS). SIMS relative sensitivity factors have been determined for these elements for both oxygen and cesium primary bombardment and positive and negative secondary ions, respectively. Molecular ions were also monitored based on data from other studies and some poor secondary atomic ion yield for certain elements, e.g., Re. Relative ion yield enhancement for certain molecules is discussed. Relevance to geological applications is noted for the elements Ru, Rh, Os, and Ir.