InxSey thin films were deposited by co-evaporation of In and Se and characterized through XRD (X-ray diffraction), spectral transmittance and AFM (atomic force microscopy) measurements. This material will later be employed as buffer layer and/or as precursor of CuInSe2(CIS) thin films used as absorber layer in thin film solar cells. The aim of this work is to obtain deposition conditions for InxSey films to use them in substitution of the CdS layer which is a toxic material generally used as buffer in CIS based solar cells.
