The potentialities of GaN monolithic technology for the growing microwave backhaul power amplifier market are discussed in this paper. To support this discussion, two GaN monolithic Doherty power amplifiers for 7 GHz backhaul applications are presented. They exhibit 5 W output power, with almost 10 dB gain and high efficiency at 7 dB output power back-off. In particular, one module has been optimized for maximum efficiency at center frequency (47% at 7 dB output power back-off), while the other for high efficiency on a larger bandwidth (15% fractional bandwidth).