Polarized Raman spectra were recorded in backscattering and right-angle geometries on single crystals of pure and Te-doped ZnSi${\mathrm{P}}_{2}$ to characterize the changes introduced by the impurity. The measurements were done in the frequency range 40---600 ${\mathrm{cm}}^{\ensuremath{-}1}$. The intensity of the ${A}_{1}$ and $2{B}_{2}$ peaks change and the ${B}_{2}$ peak shifts to lower frequency. A group-theoretical analysis has been used to assign specific atomic displacements to the observed modes.
