Increased device sizes and the demand for higher yields in the semiconductor fabrication industry has led to a requirement for improved base pressure in the vacuum systems used to process devices. This has led to the need to improve the ability of the cryopumps used on these systems to achieve a lower base pressure. Specifically, cryopumps used on production sputtering systems purposely limit pumping speeds for all gases except water vapor. This ensured a reduction in throughput for the sputtering gases used at high pressures (>10−1 Pa) but potentially limits the ultimate pressure that can be reached. Base pressures reached by cryopumps used on production sputtering systems will be described. Furthermore, the base pressure attained by a standard pump will be compared to that of a specially designed all‐metal pump. Finally, the effect of bake‐out on these pumps will be presented. Cryopumps are capture pumps. It is important to know how the base pressure is affected as gases collect on the pumping surfaces. Base pressure measurements made after accumulating gases by either cryocondensation or by cryosorption will be reported. The evolution of gases from the pumping surfaces as a result of short‐term pumping interruptions (power failure, etc.) will be shown and any effect on the subsequent base pressure achieved by the pump will be reported.