Abstract 316 nm (In)AlGaN light emitting diodes (LEDs) with one, three, five and seven quantum wells (QWs) have been investigated. The carrier injection in the devices is simulated and compared with electroluminescence measurements. The emission power of all LEDs is nearly the same at low currents. This effect is attributed to the inhomogeneous carrier distribution in the QWs of the multi‐quantum‐well (MQW) structures. Only the first two QWs closest to the p‐side of the diode contribute significantly to the optical emission (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)