The titanium based matrices TiSi2, TiN, and TiW are used extensively in current semiconductor fabrication. Quantification of elements in these matrices using secondary ion mass spectrometry (SIMS) is hampered by a lack of available information on the relative secondary ion yields for the elements of interest and by a large number of mass interferences. This study provides the ion yields in the form of relative sensitivity factors (RSFs) for a large number of elements ion implanted into these three matrices and describes methods of analysis to circumvent mass interferences of important elements. The RSFs can be organized into patterns of positive secondary ion RSFs versus ionization potential and negative secondary ion RSFs versus electron affinity, similar to those measured for other matrices. The use of molecular ions can improve detection limits for some elements with mass interferences that are beyond the mass resolution capabilities of many SIMS instruments. Depth resolution in TiW is adversely affected by surface roughening during ion bombardment.